SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of high breakdown voltage.SOLUTION: A semiconductor device of an embodiment comprises: a silicon substrate; a multilayer film which is provided on the silicon substrate and has a first aluminum nitride-containing layer, a second aluminum nitride-containing layer and a lamination film in which at least two layers out of aluminum nitride-containing layers, gallium nitride-containing layers and aluminum gallium-containing layers are alternately laminated one by one from the first aluminum nitride-containing layer toward the second aluminum nitride-containing layer to forma a super lattice; and a first gallium nitride-containing layer provided on the multilayer film.SELECTED DRAWING: Figure 1