| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal SiC wafer, capable of corresponding to an increase in diameter and obtaining a single crystal SiC wafer high in crystallinity.SOLUTION: The method for manufacturing a single crystal SiC wafer comprises: the first step of epitaxially growing a single crystal SiC layer on a silicon wafer; and the second step of removing the silicon wafer to obtain the single crystal SiC wafer consisting of the single crystal SiC layer. The first step comprises: ionizing a raw material gas including carbon and silicon while maintaining the temperature of the silicon wafer at a temperature of less than the melting point of silicon; and accelerating the ions to irradiate the silicon wafer.SELECTED DRAWING: Figure 1 |
