发明名称 ELEMENT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an element manufacturing method by which, when covering a base material by using a lid material, the lid material is prevented from being in contact with a semiconductor layer on a first electrode.SOLUTION: First of all, an intermediate product is prepared, the intermediate product including the base material, a protrusion provided on the base material, a first electrode provided on the base material within a region which is held at least partially by protrusions, and the semiconductor layer provided on the first electrode. Next, the intermediate product is covered from a side of the protrusion by using a first surface of the lid material. Thereafter a pressure in a space in contact with a second surface of the lid material at an opposite side of the first surface is increased, thereby closely contacting the first surface of the lid material to the intermediate product. In such a case, a distance H between the first surface of the lid material being supported by the protrusion and a surface of the semiconductor layer on the first electrode in a direction along a normal direction of the base material is greater than a maximum value of the amount of bending that may occur in the lid material.SELECTED DRAWING: Figure 6
申请公布号 JP2016062839(A) 申请公布日期 2016.04.25
申请号 JP20140191769 申请日期 2014.09.19
申请人 DAINIPPON PRINTING CO LTD 发明人 NIRENGI TAKAYOSHI
分类号 H05B33/04;H01L51/50;H05B33/10;H05B33/12;H05B33/22 主分类号 H05B33/04
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