| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of an interlayer wiring advantageous for the implementation of high integration of a circuit and a manufacturing method, in a laminated semiconductor element improved in an integration degree by three-dimensionally laminating a semiconductor circuit.SOLUTION: In at least one single layer semiconductor circuit constituting a laminated semiconductor element, an interlayer wiring penetrating through first and second main surfaces of the single layer semiconductor circuit is formed by: an impurity diffusion semiconductor layer formed simultaneously with the formation of a source/drain region of a transistor; a metal wiring connected to the impurity diffusion semiconductor layer and exposed to the first main surface of the single layer semiconductor circuit; and a metal wiring exposed to the second main surface of the single layer semiconductor circuit.SELECTED DRAWING: Figure 1 |
