发明名称 MANUFACTURING METHOD OF SILICON DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon device capable of making it easy to hold a pressure in a cavity portion constant.SOLUTION: A manufacturing method of a pressure sensor 1 includes: a first recess portion forming step of preparing a substrate 50 having a first recess portion 53 and a piezoresistive element 20 disposed on a bottom portion of the first recess portion 53; an AlOfilm forming step of forming an AlOfilm 54 on at least a part of an inner surface of the first recess portion 53 of the substrate 50; a sacrifice layer forming step of forming a sacrifice layer 55 on the first recess portion 53; a lid layer forming step of forming a lid layer 56 having a through-hole 57 overlapping with the first recess portion 53 in a plain view and covering an opening of the first recess portion 53; a sacrifice layer etching step of performing etching from the through-hole 57 to the sacrifice layer 55 by using hydrofluoric acid vapor; and a through-hole sealing step of sealing the through-hole 57.SELECTED DRAWING: Figure 3
申请公布号 JP2016061672(A) 申请公布日期 2016.04.25
申请号 JP20140189729 申请日期 2014.09.18
申请人 SEIKO EPSON CORP 发明人 MATSUKI HIROSHI
分类号 G01L9/00;H01L29/84 主分类号 G01L9/00
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