| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change memory capable of easily controlling a resistance value of a memory after programming.SOLUTION: When programming a selected resistance change memory from a first resistive state to a second resistive state, current flowing in the selected resistance change memory is limited to be a first limit current value or lower and a resistive state of the selected resistance change memory is changed from the first resistive state to a third resistive state in which a resistance value is smaller than that of the first resistive state. After that, current flowing in the selected resistance change memory is limited to a second limit current value, which is larger than the first limit current value, or lower and the resistive state of the selected resistance change memory is changed from the third resistive state to the second resistive state.SELECTED DRAWING: Figure 8 |
