| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic tunnel junction element capable of inverting a magnetization direction of a recording layer even with a current of a small current density.SOLUTION: Magnetic tunnel junction elements (10, 210, 310, and 410) include recording layers (11 and 21) in which magnetization directions are variable, fixed layers (13, 23, and 33) in which prescribed magnetization directions are kept, and a spacer layer (12) arranged between the recording layers (11 and 21) and the fixed layers (13, 23, and 33). The magnetic tunnel junction elements (10, 210, 310, and 410) perform writing by using a spin torque injection method. At least either of the recording layers (11 and 21) and the fixed layers (13, 23, and 33) include a ferromagnetic insulation layer. The spacer layer (12) includes a current path section (12a) which electrically connects the recording layers (11 and 21) and the fixed layers (13, 23, and 33), and an insulation section (12b) which electrically insulates between the recording layers (11 and 21) and the fixed layers (13, 23, and 33).SELECTED DRAWING: Figure 2 |
