| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an electric field at a surface of a semiconductor region in a termination region.SOLUTION: A semiconductor device according to an embodiment comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, an element region, and a termination region. The second semiconductor region is provided in the first semiconductor region. The element region includes a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, and a gate electrode. The gate electrode is opposed to the third and fourth semiconductor regions via a gate insulating layer. The termination region has a first electrode. The termination region surrounds the element region. The first electrode has a first portion extending in a first direction, and a second portion extending in a second direction. A plurality of first electrodes are provided on the first and second semiconductor regions. An interval between the first portions adjacent in the second direction is narrower than that between the second portions adjacent in the first direction.SELECTED DRAWING: Figure 2 |
