| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high mobility.SOLUTION: A semiconductor device of an embodiment comprises: a SiC layer; a gate electrode; a gate insulation film provided between the SiC layer and the gate electrode; a first region containing at least one element selected from a group consisting of N (nitrogen), P (phosphorus), As (arsenic), Sb (antimony), Sc (scandium), Y (yttrium), La (lanthanum), lanthanoid (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), H (hydrogen), D (deuterium) and F (fluorine); and a second region which is provided on the SiC layer on the first region side and has an oxygen concentration higher than a concentration of the element.SELECTED DRAWING: Figure 1 |
