发明名称 PLASMA PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing device which can be arranged in a compact form and which can operate with further stability.SOLUTION: A plasma processing device comprises: a first RF power source 104 operable to supply a microwave power to a process chamber 107 through a wave guide 110; a second RF power source 115 operable to supply a high frequency power to a sample holder through a matching device 114; a DC power source 117 operable to apply a DC voltage to the sample holder; and magnetic field-generating means. The magnetic field-generating means includes: a coil 111 operable to generate a magnetic field; and a coil case 112 operable to prevent the leak of the magnetic field thus generated. The various power sources (104, 115, 117) and the matching device 114 are disposed over the coil case 112. Further, a shield plate 119 for magnetic field shield is disposed between the wave guide 110 and the power source 104 disposed near the wave guide.SELECTED DRAWING: Figure 7
申请公布号 JP2016063131(A) 申请公布日期 2016.04.25
申请号 JP20140191306 申请日期 2014.09.19
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 ITO TORU;TAMURA HITOSHI;OGOSHI YASUO
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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