| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of a surface defect of a nitride semiconductor template.SOLUTION: A method for manufacturing a nitride semiconductor template comprises the steps of: forming a buffer layer on a sapphire substrate with conical or pyramidal protrusions arranged like a grid and formed on its surface, by growing the buffer layer to a thickness of 11-400 nm so as to be thicker than a top portion width of the protrusions; and forming a nitride semiconductor layer on the buffer layer by growing the nitride semiconductor layer.SELECTED DRAWING: Figure 1 |
