GATE CONTROL DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF CONTROLLING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a gate control device capable of shortening a switching time of a junction field effect transistor.SOLUTION: A semiconductor device according to an embodiment has a source electrode, a drain electrode, and a gate electrode. A gate voltage to be applied to a gate electrode of a junction field effect transistor having a first threshold at which the transistor becomes in an on state and a second threshold at which conductivity modulation occurs at the transistor, is controlled to be the second threshold or more when a forward current in a direction from the drain electrode toward the source electrode is applied, and controlled so as to have a point where a time change rate of the gate voltage is changed to be decreased at a voltage between the second threshold and the first threshold when the forward current is blocked.SELECTED DRAWING: Figure 1