| 摘要 |
PROBLEM TO BE SOLVED: To efficiently slice an SiC substrate from an SiC ingot.SOLUTION: A slice method includes: an initial separate layer forming step of forming a separate layer 5 at a position separated from an end face 2 of an SiC ingot 1 by scanning a convergence point P of a laser beam in parallel with the end face 2 along a predetermined separation surface 4; a repeating step of iteratively forming the separate layer 5 to form a plurality of separate layers 5 by scanning the convergence point P in parallel with the end face 2 while moving the convergence point P from the separate layer 5 closer to the end face 2 for the unit of a distance equal to thickness D of an SiC plate after the initial separate layer forming step; and a separation step of acquiring a plurality of SiC plates 6 while exfoliating them with the separate layers 5 as origins by applying an external force to the plurality of separate layers 5 which are formed in the repeating step. The number of times of specular working for making the laser beam easy to be incident on the end face of the SiC ingot 1 can be reduced and the plurality of SiC plates 6 can be efficiently acquired from the SiC ingot 1.SELECTED DRAWING: Figure 5 |
