| 摘要 |
PROBLEM TO BE SOLVED: To allow for suppression of bounce of the peak value of a collector current when a trench type insulated gate bipolar transistor is turned on.SOLUTION: A trench type insulated gate bipolar transistor includes trenches 10a, 10b, ...10e, ... formed on the surface of a first conductivity type drift layer 1, a plurality of gate electrodes 12a, 12b, 12c, ... provided selectively on the inside of the tranches 10a, 10b, ...10e, ..., insulation blocks 13d, 13e, ... composed of an insulator filling the inside of the trenches 10a, 10b, ...10e, ..., between the adjoining gate electrodes 12a, 12b, 12c, ..., and a second conductivity type collector region 6 formed on the surface of the first conductivity type drift layer 1 on the opposite side from the trenches 10a, 10b, ...10e, ...SELECTED DRAWING: Figure 1 |
