发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide: a semiconductor device which can be manufactured by a non-vacuum based and low-temperature process and which can exhibit a higher mobility; and a method for manufacturing such a semiconductor device.SOLUTION: A semiconductor device comprises: at least one semiconductor layer 160 including inorganic particles, and an organic compound of which the relative dielectric constant is 3-150. The inorganic particles are metal oxide particles or silicon particles. The rate of the inorganic particles in the semiconductor layer 160 is 10-90 mass%. The mobility of the semiconductor layer 160 is preferably 0.0001 cm/Vs or larger.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016063047(A) |
申请公布日期 |
2016.04.25 |
申请号 |
JP20140189225 |
申请日期 |
2014.09.17 |
申请人 |
ASAHI KASEI CORP;TOHOKU UNIV |
发明人 |
YUMOTO TORU;HIRANO TOSHIYUKI;WATANABE AKIRA |
分类号 |
H01L51/30;H01L21/208;H01L21/28;H01L21/288;H01L21/336;H01L21/368;H01L29/417;H01L29/786;H01L51/05 |
主分类号 |
H01L51/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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