发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide: a semiconductor device which can be manufactured by a non-vacuum based and low-temperature process and which can exhibit a higher mobility; and a method for manufacturing such a semiconductor device.SOLUTION: A semiconductor device comprises: at least one semiconductor layer 160 including inorganic particles, and an organic compound of which the relative dielectric constant is 3-150. The inorganic particles are metal oxide particles or silicon particles. The rate of the inorganic particles in the semiconductor layer 160 is 10-90 mass%. The mobility of the semiconductor layer 160 is preferably 0.0001 cm/Vs or larger.SELECTED DRAWING: Figure 3
申请公布号 JP2016063047(A) 申请公布日期 2016.04.25
申请号 JP20140189225 申请日期 2014.09.17
申请人 ASAHI KASEI CORP;TOHOKU UNIV 发明人 YUMOTO TORU;HIRANO TOSHIYUKI;WATANABE AKIRA
分类号 H01L51/30;H01L21/208;H01L21/28;H01L21/288;H01L21/336;H01L21/368;H01L29/417;H01L29/786;H01L51/05 主分类号 H01L51/30
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