| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive effect device and a magnetic memory which are arranged so that the saturated magnetization quantity of a magnetic layer and its coercive force as well as a temperature dependence thereof are controlled.SOLUTION: A magnetic resistance device comprises: a first magnetic layer 2 having perpendicular magnetic anisotropy; a second magnetic layer 6 having perpendicular magnetic anisotropy; and a first non-magnetic layer 4 between the first and second magnetic layers. The second magnetic layer includes a magnetic material expressed by (lRhR)(TMZ)(where 0<x≤1, 0≤y≤0.6, and 0.13≤z≤0.22), where lR represents at least one element selected from a group consisting of Y, La, Ce, Pr, Nd and Sm; hR represents at least one element selected from a group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; TM represents at least one element selected from a group consisting of Mn, Fe, Co and Ni; and Z represents at least one element selected from a group consisting of B, C, Mg, Al, Sc, Ti, Cu and Zn.SELECTED DRAWING: Figure 1 |
