SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve both a low-voltage operation and reduction in off-state current.SOLUTION: A semiconductor device 1 comprises: a columnar semiconductor pillar SPa formed on a surface of a semiconductor substrate 2; a lower diffusion layer 7a formed so as to be contacted with a lower end of the semiconductor pillar SPa; an LDD diffusion layer 11a formed at an upper part of the semiconductor pillar SPa; and a gate electrode Ga that covers a lateral face of the semiconductor pillar SPa via a gate insulating film 9. The LDD diffusion layer 11a includes: parts 10a and 10b each formed along a lateral face 2aS of the semiconductor pillar SPa; and a part 10c formed so as to be sandwiched between the parts 10a and 10b. Lower surfaces 10aL and 10bL of the parts 10a and 10b are located farther from an upper surface 2aU of the semiconductor pillar SPa, compared with a lower surface 10cL of the part 10c.SELECTED DRAWING: Figure 1