| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method by which a silicon oxide film grown by atomic layer deposition can be etched with a higher selection rate than that for a silicon oxide film formed by another technique, such as a thermal oxide film.SOLUTION: An etching method comprises the steps of: setting, in a chamber, a substrate to be processed, which has, on its surface, a first silicon oxide film formed by atomic layer deposition and a second silicon oxide film formed by another technique other than atomic layer deposition adjacently to the first silicon oxide film; and supplying HF gas or a combination of HF gas and Fgas, and alcohol gas or water vapor into the chamber, thereby selectively etching the first silicon oxide film rather than the second silicon oxide film.SELECTED DRAWING: Figure 3 |
