发明名称 SEMICONDUCTOR TEST DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor test device that can keep an excellent electrical contact with an electrode of a semiconductor device from an initial stage of electrification processing without adversely affecting the semiconductor device targeted for test.SOLUTION: A surface electrode 72 is formed on a surface of a semiconductor substrate 70, and a polymide layer 71, which is a protective film, is formed on an on-surface electrode polymide formation region R12, which is an outer peripheral region in the surface electrode 72, in which the polymide layer 71 is formed that extends over a semiconductor outer peripheral region S2, which is an outer region of the semiconductor substrate 70 having no surface electrode 72 formed. A laminate metal foil 20A is similar in a planar shape to the surface electrode 72, and has a shape receivable in a surface electrode exposing region S1 having no polymide layer 71 formed, in a plane view.SELECTED DRAWING: Figure 4
申请公布号 JP2016061751(A) 申请公布日期 2016.04.25
申请号 JP20140192174 申请日期 2014.09.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOKETSU HIDENORI;NAKAO YUKIYASU;YAMAMOTO SHIGEHISA;NAKADA SHUHEI
分类号 G01R31/26 主分类号 G01R31/26
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