| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same capable of reducing parasitic capacitance of a gate electrode.SOLUTION: A method of manufacturing a semiconductor device according to an embodiment includes the following steps of: forming a first electrode at a lower part of a trench formed on a semiconductor layer, via a first insulating film; forming a second insulating film that covers an inner surface at an upper part of the trench; forming a resist film that fills the upper part of the trench, on the second insulating film; removing the second insulating film between the resist film and a side wall of the trench and leaving a part of the second insulating film on the first electrode; forming a third insulating film on a side wall at the upper part of the trench; and forming a second electrode on the first electrode via a part of the second insulating film, in the trench.SELECTED DRAWING: Figure 1 |
