GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element manufacturing method which achieves improvement in positional accuracy between a comb-shaped wiring electrode and a reflection layer with a shape which follows the shape of the wiring electrode.SOLUTION: A group III nitride semiconductor light emitting element manufacturing method comprises: a wiring electrode formation process of forming a first exposed part J1a where a second insulation layer I2a is exposed and a first non-exposed part J1b where the second insulation layer 2a is not exposed; a second insulation layer formation process of etching the first exposed part J1a by using an n wiring electrode N1a and a p wiring electrode P1a as masks to expose a part of an Al layer of a reflection layer R1a to form a second exposed part J2a and not to expose the remaining part of the Al layer of the reflection layer R1a to form a second non-exposed part J2b; and a reflection layer formation process of etching the second exposed part J2a by using the n wiring electrode N1a and the p wiring electrode P1a as masks to remove the second exposed part J2a and leave the second non-exposed part J2b.SELECTED DRAWING: Figure 8