发明名称 SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR AND METHOD OF FABRICATING THE SAME
摘要 A semiconductor device with improved reliability according to the embodiment of the present invention includes a lower structure, a lower electrode arranged on the lower structure, a dielectric layer which conformally covers the surface of the lower electrode, an upper electrode which conformally covers the surface of the dielectric layer, and a barrier layer arranged on the upper electrode. A space surrounded by the upper electrode and the barrier layer can be provided on a lateral part of the lower electrode.
申请公布号 KR20160044141(A) 申请公布日期 2016.04.25
申请号 KR20140138430 申请日期 2014.10.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, YUN JUNG;OH, SE HOON;LEE, JIN SU;KIM, YOUN SOO;LIM, HAN JIN
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
代理机构 代理人
主权项
地址