发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SPUTTERING DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device, and to improve the use efficiency of a sputtering device.SOLUTION: When a thin film is deposited on a principal surface of a semiconductor wafer by using a magnetron system sputtering device in which a collimator 50a is installed in a space between the semiconductor wafer installed in a chamber and a target, reduction in wafer in-plane uniformity of the thin film generated with the progress of an integrated used amount of the target is suppressed by making a thickness in a region inside an outer peripheral part of the collimator 50a be thinner than a thickness at the outer peripheral part.SELECTED DRAWING: Figure 2
申请公布号 JP2016063187(A) 申请公布日期 2016.04.25
申请号 JP20140192478 申请日期 2014.09.22
申请人 RENESAS ELECTRONICS CORP 发明人 HAMAYA TAKASHI;TSUGANE HIDEAKI;SUZUKI SHUSUKE
分类号 H01L21/285;C23C14/14;C23C14/34;H01L21/28;H01L21/768 主分类号 H01L21/285
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