发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SPUTTERING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device, and to improve the use efficiency of a sputtering device.SOLUTION: When a thin film is deposited on a principal surface of a semiconductor wafer by using a magnetron system sputtering device in which a collimator 50a is installed in a space between the semiconductor wafer installed in a chamber and a target, reduction in wafer in-plane uniformity of the thin film generated with the progress of an integrated used amount of the target is suppressed by making a thickness in a region inside an outer peripheral part of the collimator 50a be thinner than a thickness at the outer peripheral part.SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016063187(A) |
申请公布日期 |
2016.04.25 |
申请号 |
JP20140192478 |
申请日期 |
2014.09.22 |
申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
HAMAYA TAKASHI;TSUGANE HIDEAKI;SUZUKI SHUSUKE |
分类号 |
H01L21/285;C23C14/14;C23C14/34;H01L21/28;H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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