| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing deterioration in transistors constituting a word line driver.SOLUTION: A word line driver circuit includes: a first transistor P04 having a source-drain path between a first power supply line VPP and a first word line MWL80; a second transistor N04 having a source-drain path between the first word line MWL80 and a first circuit node A03; a third transistor 55 having a source-drain path between the first power supply line VPP and a second circuit node; a fourth transistor 56 having a source-drain path between the second circuit node and the first circuit node A03; and a fifth transistor 54 having a source-drain path between the first circuit node A03 and a second power supply line VSS. Even when a high-level signal is supplied to a wiring RF3, the first circuit node A03 is precharged to VPP-Vt, thereby avoiding hot carrier deterioration of the second transistor N04.SELECTED DRAWING: Figure 6 |
