| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of alleviating a stress applied to a semiconductor layer.SOLUTION: A semiconductor device according to an embodiment comprises: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on the first semiconductor layer; a third semiconductor layer of a second conductivity type selectively provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type provided on the third semiconductor layer; a first electrode provided on the second, third, and fourth semiconductor layers via an insulating film; a second electrode provided on the fourth semiconductor layer and connected with the fourth semiconductor layer; and a third electrode separated from the second electrode, and having one end contacted with the first semiconductor layer and the other end located at a surface side of the second semiconductor layer, and width at the other end side wider than a width at the one end side, at a cutting surface in a direction parallel to an arrangement direction with the second electrode.SELECTED DRAWING: Figure 1 |
