| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor storage device and a driving method of the same.SOLUTION: The semiconductor storage device comprises a semiconductor member, an electrode member, a charge storage member capable of storing charge, a memory part, and a control part. A memory cell is formed on each intersecting portion of the semiconductor member with the electrode member with the charge storage member interposed therebetween. The memory part holds information indicating whether the memory cell belongs to a first group or a second group. When reducing a charge stored in the charge storage member, the control part performs: a first step of applying a voltage both between the semiconductor member and the electrode member which constitute the memory cell belonging to the first group and between the semiconductor member and the electrode member which constitute the memory cell belonging to the second group; and a second step of applying a voltage between the semiconductor member and the electrode member which constitute the memory cell belonging to the second group.SELECTED DRAWING: Figure 1 |
