| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with small temperature dependence of a yield voltage.SOLUTION: A semiconductor device according to an embodiment comprises a first semiconductor region, a plurality of diodes, an isolation region, a first electrode, a second electrode, and a third electrode. The diode includes a second semiconductor region of a first conductivity type, and a third semiconductor region of a second conductivity type. The second semiconductor region is selectively provided on the first semiconductor region. The third semiconductor region is selectively provided on the first semiconductor region. The third semiconductor region is adjacent to the second semiconductor region. The isolation region is provided in the first semiconductor region and located between the adjacent diodes. The first electrode connects the adjacent second and third semiconductor regions with the isolation region. The second electrode is connected with the second semiconductor region. The third electrode is connected with the third semiconductor region.SELECTED DRAWING: Figure 1 |
