METHOD OF FABRICATING THE VARIABLE RESISTANCE MEMORY

摘要

A variable resistance memory device with improved reliability according to an embodiment of the present invention includes: preparing a substrate having a lower electrode; forming a mold layer on the substrate; forming a trench by patterning the mold layer; forming a variable resistance layer which includes a first part in the trench, and a second part on the upper surface of the mold layer, by filling the trench on the mold layer; and delaminating the second part of the variable resistance layer from the second part by applying a laser to the variable resistance layer, and forming a variable resistance element in the trench.