| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for evaluating the presence/absence or degree of metal contamination other than Fe in a silicon wafer.SOLUTION: In a metallic contamination evaluation method, after an evaluation object silicon wafer is irradiated with light, a recombination lifetime is measured by a microwave photoconductivity decay method over time, and time dependent information of the recombination lifetime is obtained. The obtained time dependent information of the recombination lifetime is compared with reference time dependent information that is obtained by measuring or calculating a recombination lifetime on an Fe contaminated boron dope p-type silicon wager, and it is discriminated whether the evaluation object silicon wafer is contaminated with any metals other than Fe. If the presence of metal contamination other than Fe is discriminated, the method further includes a step of calculating a concentration of the metal contamination other than Fe.SELECTED DRAWING: Figure 1 |
