发明名称 SEMICONDUCTOR DEVICE FOR POWER AND GATE DRIVER CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device for power, capable of suppressing malfunction in a high-side driver.SOLUTION: The semiconductor device for power includes a first output transistor having one end of a current path connected with a first node. The semiconductor device for power also includes a second output transistor having one end of a current path connected with the other end of the current path of the first output transistor and having the other end of the current path connected with a second node. The semiconductor device for power also includes a gate driver circuit for controlling the first and the second output transistors.SELECTED DRAWING: Figure 1
申请公布号 JP2016058956(A) 申请公布日期 2016.04.21
申请号 JP20140185316 申请日期 2014.09.11
申请人 TOSHIBA CORP 发明人 MIWA RYOTA
分类号 H03K17/08;H02M1/08;H03K17/687;H03K19/0185 主分类号 H03K17/08
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