| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon single crystal that suppresses contact of SiO generated in a chamber with a graphite crucible and a heater, while suppressing back diffusion of CO generated in the graphite crucible and the heater to the melt side, and to provide a silicon single crystal.SOLUTION: In a period from raw material melting to start of drawing-up of a silicon single crystal C, a position of a crucible 3 is controlled so that an upper end of a graphite crucible 3b is positioned 5-95 mm upward from an upper end of a heater 4. In a period from the raw material melting to end of drawing-up of the silicon single crystal C, the position of the crucible 3 is controlled so that an exhaust gas cross-sectional area S1 of a first exhaust gas passage X1 is less than an exhaust gas cross-sectional area S3 of a third exhaust gas passage X3, wherein the exhaust gas cross-sectional area S1 is an area a gap between a lower end of a radiation shield 11 and a surface of a melt M and the exhaust gas cross-sectional area S3 is an area formed between an inner cylinder 5 and an outer cylinder 8.SELECTED DRAWING: Figure 1 |
