发明名称 FILM SURFACE PROCESSING METHOD AND DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a film surface processing method and a device for preventing a deposit on an electrode, in a plasma film deposition on a film to be processed, to improve a yield and to increase a makeup electric power thereby to retain a satisfactory film quality while performing a high-speed processing.SOLUTION: A roll electrode 11 is wound with a portion (a curved film portion 9a) of a treated film 9, and this treated film 9 is folded back to cover a flat opposed face 21a of a plate electrode 21 with another portion (or a flat film part 9b) of the treated film 9. The roll electrode 11 is rotated to transport the treated film 9. A process gas is fed between the curved film portion 9a and the flat film part 9b, and an electric field is applied between the electrodes 11 and 21 thereby to establish an electric discharge.SELECTED DRAWING: Figure 1
申请公布号 JP2016056390(A) 申请公布日期 2016.04.21
申请号 JP20140181133 申请日期 2014.09.05
申请人 SEKISUI CHEM CO LTD 发明人 NAKANO YOSHINORI;IWASAKI MASAKI
分类号 C23C16/505;C08J7/00;C23C16/26;H05H1/24 主分类号 C23C16/505
代理机构 代理人
主权项
地址