发明名称 |
INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer. |
申请公布号 |
US2016111490(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201514976873 |
申请日期 |
2015.12.21 |
申请人 |
RENESAS ELECTRONICS CORPORATION ;Renesas Eastern Japan Semiconductor, Inc. |
发明人 |
INAGAWA Hiroshi;MACHIDA Nobuo;OISHI Kentaro |
分类号 |
H01L29/06;H01L29/51;H01L29/423;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |