| 发明名称 |
SUBSTRATE PROCESSING APPARATUS, LINKED PROCESSING SYSTEM, AND SUBSTRATE PROCESSING METHOD |
| 摘要 |
A substrate processing apparatus comprises: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus. |
| 申请公布号 |
US2016111296(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201514883738 |
申请日期 |
2015.10.15 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Yun Jong Won |
| 分类号 |
H01L21/311;H01L21/3105;H01L21/66 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus, comprising:
a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit, wherein the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus. |
| 地址 |
Tokyo JP |
