| 发明名称 |
Method of Semiconductor Device Fabrication |
| 摘要 |
A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate, forming a hard mask (HM) layer over the dielectric layer, forming a fin trench through the HM layer and the dielectric layer and extending down to the substrate, forming a semiconductor feature in the fin trench and removing the HM layer to expose an upper portion of the semiconductor feature to form fin features. |
| 申请公布号 |
US2016111286(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414517238 |
申请日期 |
2014.10.17 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wen Tsung-Yao;Hsiao Angus |
| 分类号 |
H01L21/02;H01L21/033 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
depositing a dielectric layer over a substrate; depositing a hard mask (HM) layer over the dielectric layer; forming a fin trench through the HM layer and the dielectric layer and extending to the substrate; forming a semiconductor feature in the fin trench; and removing the HM layer to expose an upper portion of the semiconductor feature to form fin features. |
| 地址 |
Hsin-Chu TW |
