发明名称 COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, AND METHOD FOR MANUFACTURING SAME
摘要 A composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, can form a ferroelectric thin film by temporary firing and permanent firing of a coating film. The composition contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200° C. to 300° C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400° C. to 500° C. becomes equal to or greater than 55 GPa. Thus a thin film having high crystallinity can be formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.
申请公布号 US2016111277(A1) 申请公布日期 2016.04.21
申请号 US201414787915 申请日期 2014.05.14
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 Doi Toshihiro;Sakurai Hideaki;Soyama Nobuyuki
分类号 H01L21/02;H01L49/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A composition for forming a ferroelectric thin film that forms a ferroelectric thin film by temporary firing and permanent firing of a coating film, comprising: a precursor of the ferroelectric thin film; a solvent; and a reaction control substance, wherein the reaction control substance is contained in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200° C. to 300° C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400° C. to 500° C. becomes equal to or greater than 55 GPa.
地址 Tokyo JP