发明名称 SOURCE, TARGET AND MASK OPTIMIZATION BY INCORPORATING CONTOUR BASED ASSESSMENTS AND INTEGRATION OVER PROCESS VARIATIONS
摘要 Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output
申请公布号 US2016109795(A1) 申请公布日期 2016.04.21
申请号 US201514985049 申请日期 2015.12.30
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 INOUE TADANOBU;MELVILLE DAVID O.;ROSENBLUTH ALAN E.;SAKAMOTO MASAHARU;TIAN KEHAN
分类号 G03F1/36;G06F17/50;G03F7/20 主分类号 G03F1/36
代理机构 代理人
主权项 1. A method for determining a source shape, a mask shape and a target shape for a lithography process comprising: formulating an optimization problem by forming a constraint function; solving, by a hardware processor, the optimization problem by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape; and outputting the determined source shape and mask shape.
地址 Armonk NY US