发明名称 |
SOURCE, TARGET AND MASK OPTIMIZATION BY INCORPORATING CONTOUR BASED ASSESSMENTS AND INTEGRATION OVER PROCESS VARIATIONS |
摘要 |
Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output |
申请公布号 |
US2016109795(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201514985049 |
申请日期 |
2015.12.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
INOUE TADANOBU;MELVILLE DAVID O.;ROSENBLUTH ALAN E.;SAKAMOTO MASAHARU;TIAN KEHAN |
分类号 |
G03F1/36;G06F17/50;G03F7/20 |
主分类号 |
G03F1/36 |
代理机构 |
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代理人 |
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主权项 |
1. A method for determining a source shape, a mask shape and a target shape for a lithography process comprising:
formulating an optimization problem by forming a constraint function; solving, by a hardware processor, the optimization problem by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape; and outputting the determined source shape and mask shape. |
地址 |
Armonk NY US |