发明名称 SEMICONDUCTOR CHIP MANUFACTURING METHOD AND ETCHING CONDITION DESIGN METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor chip manufacturing method which can reduce an area of a rear face of a semiconductor chip after dicing to be smaller than an area of a surface.SOLUTION: A semiconductor chip manufacturing method comprises the steps of: forming on a cut region of a surface of a semiconductor substrate W where a plurality of light emitting elements 100 are formed, fine grooves 140 on the surface side by anisotropic dry etching; subsequently thinning the substrate from a rear face of the substrate by back grind and dicing the plurality of semiconductor elements to semiconductor chips; and changing etching conditions of the anisotropic dry etching in the process of forming the fine grooves 140 in a manner such that each fine groove 140 has a first groove portion and a second groove portion which is located under the first groove portion and has a width Sb wider than a width Sa of the first groove portion.SELECTED DRAWING: Figure 2
申请公布号 JP2016058710(A) 申请公布日期 2016.04.21
申请号 JP20150106148 申请日期 2015.05.26
申请人 FUJI XEROX CO LTD 发明人 ONO KENICHI;IKOMA HIDEYUKI;KOMAGATA SHOGO;MURATA MICHIAKI;OTSUKA TSUTOMU
分类号 H01L21/301 主分类号 H01L21/301
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