| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving a withstanding voltage.SOLUTION: According to an embodiment, there is provided a semiconductor device comprising a first semiconductor layer, a second semiconductor layer provided on the first semiconductor layer, source and drain electrodes provided on the second semiconductor layer, a gate electrode, and a first field plate electrode. The second semiconductor layer includes a first semiconductor portion, and a second semiconductor portion thinner than the first semiconductor portion. The source and drain electrodes are electrically connected with the second semiconductor layer. The gate electrode is provided on the second semiconductor layer between the source electrode and the drain electrode. The first field plate electrode is provided on the second semiconductor layer and includes a conductive part. The conductive part is provided between the gate electrode and the drain electrode when seen in a first direction from the first semiconductor layer toward the second semiconductor layer. At least a part of an end part of the conductive part is located on the second semiconductor portion.SELECTED DRAWING: Figure 1 |
