| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device manufacturing method which can mitigate field concentration on a gate insulation film by a simple process.SOLUTION: A manufacturing method of a silicon carbide semiconductor device 1 comprises following steps. A silicon carbide substrate 10 has a connection region 17 which is provided so as to include one end C0 of one edge, a vertex C1 closest to an end of a first body region 13a1 and a vertex C2 closest to an end of a second body region 13b1 when viewed from a direction perpendicular to a principal surface 10a, and electrically connected to both of the first body region 13a1 and the second body region 13b1 and has a second conductivity type. When viewed from a direction parallel with the principal surface 10a, a first drift region 12a1 and a second drift region 12b1 are provided between a gate insulation film 15 and the connection region 17. The connection region 17, the first body region 13a1 and the second body region 13b1 are formed by ion injection.SELECTED DRAWING: Figure 1 |
