| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining a good-quality graphene film.SOLUTION: A semiconductor device according to an embodiment comprises: a first film 14 that has a first melting point; a second film 15 that is provided on an upper surface of the first film, and that has a second melting point lower than the first melting point, and that functions as a catalyst for growing graphene, and that has a lateral face prescribing a step; and a graphene film 17 provided on the upper surface of the first film, and contacted with the lateral face of the second film.SELECTED DRAWING: Figure 4 |
