| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor, a transistor array, a thin film transistor manufacturing method and a transistor array manufacturing method.SOLUTION: In a thin film transistor including at least a support medium, a source electrode and drain electrode which are composed of a conductor, a semiconductor layer, an insulation layer and a gate electrode composed of a conductor, which are laminated in this order, in a lamination cross section of the thin film transistor, a difference between an electrode width of a surface contacting the support medium and an electrode width of a surface opposite to the surface contacting the support medium and contacting the semiconductor layer, of the electrode having a larger electrode width out of the source electrode and drain electrode is within a range of ±1 μm, and when assuming that arithmetic average roughness of the electrode width of the surface opposite to the surface contacting the support medium and contacting the semiconductor layer is Ra, Ra≤10 nm is satisfied.SELECTED DRAWING: Figure 2 |
