发明名称 |
Acoustic Wave Device |
摘要 |
An acoustic wave device 10 is an end surface reflection-type acoustic wave device and includes a substantially rectangular-parallelepiped composite substrate 15 in which a piezoelectric substrate 12 and a supporting substrate 14 are joined together, with a pair of IDT electrodes 16 and 18 provided on the substrate 12 in such a manner as to be intercalated with each other. A chipping size in a first side face 12a of the substrate 12 is 1/10 of a wavelength π of an acoustic wave or smaller, the face 12a extending orthogonally to a direction of acoustic-wave propagation. A chipping size in a second side face 12b of the substrate 12 is larger than the chipping size in the face 12a and is, for example, 1/2 of the wavelength λ or larger and 50 times the wavelength λ or smaller, the face 12b extending in the direction of acoustic-wave propagation. |
申请公布号 |
US2016112029(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201514978055 |
申请日期 |
2015.12.22 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
Tai Tomoyoshi;Hamajima Akira;Hori Yuji |
分类号 |
H03H9/25;H03H9/145 |
主分类号 |
H03H9/25 |
代理机构 |
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代理人 |
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主权项 |
1. An end surface reflection-type acoustic wave device comprising a substantially rectangular-parallelepiped composite substrate in which a supporting substrate and a piezoelectric substrate are joined together, with a pair of IDT electrodes provided on the piezoelectric substrate in such a manner as to be intercalated with each other,
wherein a chipping size in a first side face of the piezoelectric substrate is 1/10 of a wavelength λ of an acoustic wave or smaller, the first side face extending orthogonally to a direction of acoustic-wave propagation, and wherein a chipping size in a second side face of the piezoelectric substrate is larger than the chipping size in the first side face and is ½ of the wavelength λ of the acoustic wave or larger and 50 times the wavelength λ of the acoustic wave or smaller, the second side face extending in the direction of acoustic-wave propagation. |
地址 |
Aichi JP |