发明名称 Acoustic Wave Device
摘要 An acoustic wave device 10 is an end surface reflection-type acoustic wave device and includes a substantially rectangular-parallelepiped composite substrate 15 in which a piezoelectric substrate 12 and a supporting substrate 14 are joined together, with a pair of IDT electrodes 16 and 18 provided on the substrate 12 in such a manner as to be intercalated with each other. A chipping size in a first side face 12a of the substrate 12 is 1/10 of a wavelength π of an acoustic wave or smaller, the face 12a extending orthogonally to a direction of acoustic-wave propagation. A chipping size in a second side face 12b of the substrate 12 is larger than the chipping size in the face 12a and is, for example, 1/2 of the wavelength λ or larger and 50 times the wavelength λ or smaller, the face 12b extending in the direction of acoustic-wave propagation.
申请公布号 US2016112029(A1) 申请公布日期 2016.04.21
申请号 US201514978055 申请日期 2015.12.22
申请人 NGK INSULATORS, LTD. 发明人 Tai Tomoyoshi;Hamajima Akira;Hori Yuji
分类号 H03H9/25;H03H9/145 主分类号 H03H9/25
代理机构 代理人
主权项 1. An end surface reflection-type acoustic wave device comprising a substantially rectangular-parallelepiped composite substrate in which a supporting substrate and a piezoelectric substrate are joined together, with a pair of IDT electrodes provided on the piezoelectric substrate in such a manner as to be intercalated with each other, wherein a chipping size in a first side face of the piezoelectric substrate is 1/10 of a wavelength λ of an acoustic wave or smaller, the first side face extending orthogonally to a direction of acoustic-wave propagation, and wherein a chipping size in a second side face of the piezoelectric substrate is larger than the chipping size in the first side face and is ½ of the wavelength λ of the acoustic wave or larger and 50 times the wavelength λ of the acoustic wave or smaller, the second side face extending in the direction of acoustic-wave propagation.
地址 Aichi JP