| 发明名称 |
Metal Gate with Silicon Sidewall Spacers |
| 摘要 |
A method includes forming an opening in a dielectric to reveal a protruding semiconductor fin, forming a gate dielectric on sidewalls and a top surface of the protruding semiconductor fin, and forming a conductive diffusion barrier layer over the gate dielectric. The conductive diffusion barrier layer extends into the opening. The method further includes forming a silicon layer over the conductive diffusion barrier layer and extending into the opening, and performing a dry etch on the silicon layer to remove horizontal portions and vertical portions of the silicon layer. After the dry etch, a conductive layer is formed over the conductive diffusion barrier layer and extending into the opening. |
| 申请公布号 |
US2016111543(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201514801319 |
申请日期 |
2015.07.16 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Fang Wen-Han;Wu Po-Chi |
| 分类号 |
H01L29/78;H01L21/3213;H01L29/49;H01L21/28;H01L29/40;H01L29/06;H01L29/66;H01L21/311 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming an opening in a dielectric to reveal a protruding semiconductor fin; forming a gate dielectric on sidewalls and a top surface of the protruding semiconductor fin; forming a conductive diffusion barrier layer over the gate dielectric, wherein the conductive diffusion barrier layer extends into the opening; forming a silicon layer over the conductive diffusion barrier layer and extending into the opening; performing a dry etch on the silicon layer to remove horizontal portions and vertical portions of the silicon layer; and after the dry etch, forming a conductive layer over the conductive diffusion barrier layer and extending into the opening. |
| 地址 |
Hsin-Chu TW |
