| 发明名称 |
HIGH MOBILITY PMOS AND NMOS DEVICES HAVING Si-Ge QUANTUM WELLS |
| 摘要 |
At least one method, apparatus and system disclosed involves semiconductor base structure adapted for accepting at least one of a NMOS device and a PMOS device. A substrate is formed. A strained relaxed layer is formed on the substrate. A first tensile strained layer is formed on the strained relaxed layer. A first compressive strain layer is formed on the first tensile strained layer. |
| 申请公布号 |
US2016111539(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414519709 |
申请日期 |
2014.10.21 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Nayak Deepak Kumar |
| 分类号 |
H01L29/78;H01L29/12;H01L21/02;H01L29/165;H01L21/8238;H01L29/66;H01L27/092 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for providing a semiconductor base structure, comprising:
forming a substrate; forming a strained relaxed layer on said substrate; forming a first tensile strained layer on said strained relaxed layer; and forming a first compressive strain layer on said first tensile strained layer. |
| 地址 |
Grand Cayman KY |
