发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
Some embodiments of the present disclosure provide a method of manufacturing a semiconductor device including receiving a FinFET precursor including a fin structure formed between isolation regions, and a gate structure formed over a portion of the fin structure such that a sidewall of the fin structure is in contact with a gate spacer of the gate structure; patterning the fin structure to comprise a pattern of at least one upward step rising from the isolation region; forming a capping layer over the fin structure, the isolation region, and the gate structure; performing an annealing process on the FinFET precursor to form at least two dislocations along the upward step; and removing the capping layer. |
申请公布号 |
US2016111536(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201414515225 |
申请日期 |
2014.10.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
CHEN I-CHIH;HSIEH CHIH-MING;TSAI FU-TSUN;LEE YUNG-FA;HUANG CHIH-MU |
分类号 |
H01L29/78;H01L21/265;H01L21/324;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device comprising:
receiving a FinFET precursor comprising:
a fin structure formed between isolation regions; anda gate structure formed over a portion of the fin structure such that a sidewall of the fin structure is in contact with a gate spacer of the gate structure; patterning the fin structure to comprise at least one upward step rising from the isolation region; forming a capping layer over the fin structure, the isolation region, and the gate structure; performing an annealing process on the FinFET precursor to form at least two dislocations along the upward step; and removing the capping layer. |
地址 |
HSINCHU TW |