发明名称 |
SEMICONDUCTOR DEVICES INCLUDING A GATE CORE AND A FIN ACTIVE CORE AND METHODS OF FABRICATING THE SAME |
摘要 |
Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively. |
申请公布号 |
US2016111524(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201514820860 |
申请日期 |
2015.08.07 |
申请人 |
HA Seungseok;BAI Keunhee;YEO Kyounghwan;PARK Eunsil;SHIN Heonjong |
发明人 |
HA Seungseok;BAI Keunhee;YEO Kyounghwan;PARK Eunsil;SHIN Heonjong |
分类号 |
H01L29/66;H01L21/762 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a semiconductor device, comprising:
forming an isolation region defining a fin active region on a substrate; forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region; forming a first interlayer insulating layer between the sacrificial field gate pattern and the sacrificial fin gate pattern; forming a field gate cut zone comprising a first recess exposing a surface of the isolation region by removing a first portion of the sacrificial field gate pattern and a fin active cut zone comprising a second recess exposing a surface of the fin active region by removing a first portion of the sacrificial fin gate pattern; forming a fin active recess by removing the fin active region exposed in the second recess of the fin active cut zone; forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively; forming a field gate electrode opening by removing a second portion of the sacrificial field gate pattern and forming a fin gate electrode opening by removing a second portion of the sacrificial fin gate pattern; and forming a field gate pattern in the field gate electrode opening and forming a fin gate pattern in the fin gate electrode opening. |
地址 |
Hwaseong-si KR |