发明名称 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM
摘要 There is provided a substrate processing apparatus of performing a predetermined substrate process on a plurality of target substrates under a vacuum atmosphere, including: a plurality of processing parts each configured to perform the substrate process on each of the plurality of target substrates; a gas supply mechanism configured to supply a processing gas to each of the plurality of processing parts; a single exhaust mechanism configured to exhaust the processing gas within the plurality of processing parts; and a control part configured to control the single exhaust mechanism to collectively exhaust the processing gas within the plurality of processing parts, and control the gas supply mechanism to separately supply the processing gas into each of the plurality of processing parts such that a difference between internal pressures of the plurality of processing parts is prevented.
申请公布号 US2016111304(A1) 申请公布日期 2016.04.21
申请号 US201514886325 申请日期 2015.10.19
申请人 TOKYO ELECTRON LIMITED 发明人 TAKAHASHI Hiroyuki;KAZAMA Kazunori;IWABUCHI Noriyuki;TODA Satoshi;TAKAHASHI Tetsuro
分类号 H01L21/67;H01L21/3065 主分类号 H01L21/67
代理机构 代理人
主权项 1. A substrate processing apparatus of performing a predetermined substrate process on a plurality of target substrates under a vacuum atmosphere, comprising: a plurality of processing parts each configured to perform the substrate process on each of the plurality of target substrates; a gas supply mechanism configured to separately supply a processing gas to each of the plurality of processing parts; a single exhaust mechanism configured to collectively exhaust a processing gas within the plurality of processing parts; and a control part configured to control the gas supply mechanism and the single exhaust mechanism, wherein the control part controls the single exhaust mechanism to collectively exhaust the processing gas within the plurality of processing parts, and controls the gas supply mechanism to separately supply the processing gas into each of the plurality of processing parts such that a difference between internal pressures of the plurality of processing parts is prevented.
地址 Tokyo JP