| 发明名称 |
ITERATIVE SELF-ALIGNED PATTERNING |
| 摘要 |
A method for self-aligned patterning includes providing a substrate, forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate, depositing a first spacer layer over the mandrel layer, the first spacer layer comprising a first type of material, anisotropically etching the first spacer layer to leave a first set of spacers on sidewalls of the mandrel features, removing the mandrel layer, depositing a second spacer layer over remaining portions of the first set of spacers, and anisotropically etching the second spacer layer to form a second set of spacers on sidewalls of the first set of spacers. |
| 申请公布号 |
US2016111297(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414517252 |
申请日期 |
2014.10.17 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
CHEN DE-FANG;LIN HUAN-JUST;LEE CHUN-HUNG;CHEN CHAO-CHENG |
| 分类号 |
H01L21/311;H01L21/02;H01L21/3105 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for self-aligned patterning, the method comprising:
providing a substrate; forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate; depositing a first spacer layer over the mandrel layer, the first spacer layer comprising a first type of material; anisotropically etching the first spacer layer to leave a first set of spacers on sidewalls of the mandrel features; removing the mandrel layer; depositing a second spacer layer over remaining portions of the first set of spacers; and anisotropically etching the second spacer layer to form a second set of spacers on sidewalls of the first set of spacers. |
| 地址 |
Hsin-Chu TW |
