发明名称 |
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor substrate having a silicon-based substrate, a buffer layer provided on the silicon-based substrate and made of a nitride semiconductor containing boron, and an operation layer formed on the buffer layer, wherein a concentration of boron in the buffer layer gradually decreasing toward a side of the operation layer from a side of the silicon-based substrate. Thereby, the semiconductor substrate in which the buffer layer contains boron sufficient to obtain a dislocation suppression effect and boron is not diffused to the operation layer is provided. |
申请公布号 |
US2016111273(A1) |
申请公布日期 |
2016.04.21 |
申请号 |
US201414892034 |
申请日期 |
2014.05.02 |
申请人 |
SANKEN ELECTRIC CO., LTD. ;SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
SHIKAUCHI Hiroshi;SATO Ken;GOTO Hirokazu;SHINOMIYA Masaru;TSUCHIYA Keitaro;HAGIMOTO Kazunori |
分类号 |
H01L21/02;H01L29/66;H01L29/15;H01L29/778;H01L29/20;H01L29/205 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Niiaz-shi, Saitama JP |